Brand Name:
ST
Model Number:
PD57030-E
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| Product name:PD57030-E |  |
| Manufacturer: STMicroelectronics | Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors |
| Transistor Polarity: N-Channel | Technology: Si |
| Id-Continuous Drain Current: 4 A | Vds-drain-source breakdown voltage: 65 V |
| Operating frequency: 1 GHz | Gain: 14 dB |
| Output power: 30W | Minimum operating temperature: - 65 C |
| Maximum operating temperature: + 150 C | Installation style: SMD/SMT |
| Package/Case: PowerSO-10RF-Formed-4 | Package: Tube |
| Brand: STMicroelectronics | Channel Mode: Enhancement |
| Configuration: Single | Height: 3.5 mm |
| Length: 7.5 mm | Moisture Sensitivity: Yes |
| Pd-Power Dissipation: 52.8 W | Product Type: RF MOSFET Transistors |
| Series: PD57030-E | Factory Packing Quantity: 400 |
| Subcategory: MOSFETs | Type: RF Power MOSFET |
| Vgs - Gate-Source Voltage: 20 V | Unit weight: 3 g |
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