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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor

High Power PNP Transistor Electronic Components

160V Silicon Power Transistor

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

Model Number:

2N5401

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Product Details
VCBO:
-160V
VCEO:
-150V
VEBO:
-5V
Usage:
Electronic Components
Tj:
150Š
Case:
Tape/Tray/Reel
Payment & Shipping Terms
Minimum Order Quantity
1000-2000 PCS
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)

 

 

FEATURE
 

 

Ÿ Switching and Amplification in High Voltage

Ÿ Applications such as Telephony

Ÿ Low Current

Ÿ High Voltage

 

 

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
2N5401 TO-92 Bulk 1000pcs/Bag
2N5401-TA TO-92 Tape 2000pcs/Box

 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -0.6 A
PC Collector Power Dissipation 625 mW
R0 JA Thermal Resistance From Junction To Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -160     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150     V
Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -5     V
Collector cut-off current ICBO VCB=-120V,IE=0     -50 nA
Emitter cut-off current IEBO VEB=-3V,IC=0     -50 nA

 

DC current gain

hFE(1) VCE=-5V, IC=-1mA 80      
hFE(2) VCE=-5V, IC=-10mA 100   300  
hFE(3) VCE=-5V, IC=-50mA 50      
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA     -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA     -1 V
Transition frequency fT VCE=-5V,IC=-10mA, f =30MHz 100   300 MHz

 
  

CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 100-150 150-200 200-300

 

 

 

 

Typical Characteristics

 

 


SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 1 

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 2

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 3

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 4

 


 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 


TO-92 7DSH DQG 5HHO

 

 SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 5

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components 6
 




 
 

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