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RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

RoHS Tip Power Transistors

30v Tip Power Transistors

30v NPN Power Transistor

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

Model Number:

D882

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Product Details
Collector-Base VoltageCollector-Base Voltage:
40v
Collector-Emitter Voltage:
30v
Emitter-Base Voltage:
6V
Power Mosfet Transistor:
TO-126 Plastic-Encapsulate
Material:
Silicon
Type:
Triode Transistor
Payment & Shipping Terms
Minimum Order Quantity
1000-2000 PCS
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

 

 

FEATURE
 


Power Dissipation

 

 

 

MARKING

 

D882=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 0

 

 

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D882 TO-126 Bulk 200pcs/Bag
D882-TU TO-126 Tube 60pcs/Tube

 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
 

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

 
 
 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40     V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6     V
Collector cut-off current ICBO VCB= 40 V, IE=0     1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0     10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0     1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60   400  
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A     0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A     1.5 V

 

Transition frequency

 

fT

VCE= 5V, IC=0.1A

f =10MHz

 

 

90

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 


Typical Characteristics

 

 
 RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 1RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 2RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 3RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 4
 

 Package Outline Dimensions
 

 

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

 
 
RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v 5
 
 

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