Name: High Performance Mosfet Power Transistor With Extreme High Cell Density
Brand: Hua Xuan Yang
SKU: HXY1404S
Rating: 4.7 (134 reviews)

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High Performance Mosfet Power Transistor With Extreme High Cell Density

n channel mosfet transistor

high voltage transistor

Place of Origin:

ShenZhen China

Brand Name:

Hua Xuan Yang

Certification:

RoHS、SGS

Model Number:

HXY1404S

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High Performance Mosfet Power Transistor With Extreme High Cell Density

Product Details

Product Name:

Mosfet Power Transistor

Model:

AOD240

VDS:

40V

ID (at V GS =10V):

70A

R DS(ON) (at V GS =10V):

< 3mΩ

R DS(ON) (at V GS = 4.5V):

< 3.9mΩ

Payment & Shipping Terms

Minimum Order Quantity

Negotiation

Price

Negotiated

Packaging Details

Boxed

Delivery Time

1 - 2 Weeks

Payment Terms

L/C T/T Western Union

Supply Ability

18,000,000PCS / Per Day

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Product Description

General Description

The AOD240 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
R DS(ON) and C rss .In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body diode

Parameters

Part Number	Status	Package	Polarity	VDS (V)	VGS (±V)	ID (A)	PD (W)	RDS(ON) (mΩ max)† at VGS=				VGS(th) (max V)	Ciss (pF)	Coss (pF)	Crss (pF)	Qg* (nC)	Qgd (nC)	Td(on) (ns)	Td(off) (ns)	Trr (ns)	Qrr (nC)
Part Number	Status	Package	Polarity	VDS (V)	VGS (±V)	25°C	25°C	10V	4.5V	2.5V	1.8V	VGS(th) (max V)	Ciss (pF)	Coss (pF)	Crss (pF)	Qg* (nC)	Qgd (nC)	Td(on) (ns)	Td(off) (ns)	Trr (ns)	Qrr (nC)
AOD240	Full Production	TO-252	N	40	20	70	150	3	3.9			2.2	3510	1070	68	22	7	11	38	21	58
AOD403	Not for New Designs	TO-252	P	-30	25	-70	90	8				-3.5	2890	585	470	51*	16	16	45	18	11
AOD407	Full Production	TO-252	P	-60	20	-12	50	115	150			-3	987	114	46	7.4	3.5	9	25	27.5	30
AOD409	Full Production	TO-252	P	-60	20	-26	60	40	55			-2.4	2977	241	153	22.2	10	12	38	40	59
AOD409G	Full Production	TO-252	P	-60	20	-28	60	40	55			-2.5	2350	160	115	22	10	12	38	23	107
AOD413A	Full Production	TO-252	P	-40	20	-12	50	44	66			-3	900	97	68	7.2	3.5	6.2	44.8	21.2	13.8
AOD417	Full Production	TO-252	P	-30	20	-25	50	34	55			-3	920	140	90	8.2	3.6	8	22	23	14
AOD418	Full Production	TO-252	N	30	20	36	50	7.5	11			2.5	1150	180	105	9.5	5	6.5	17	8.7	13.5
AOD423	Not for New Designs	TO-252	P	-30	25	-70	90	8				-3.5	2760	550	375	45*	12	13	35	15	30
AOD424	Full Production	TO-252	N	20	12	45	100	4.4	5.7			1.6	3860	740	580	36	12	7	70	17	36
AOD424G	Full Production	TO-252	N	20	12	46	50		4.9	6.3		1.25	3300	485	370	31	8			17	30
AOD442	Not for New Designs	TO-252	N	60	20	38	60	20	25			3	1920	155	116	24.2	14.4	7.4	28.2	3	46
AOD442G	Full Production	TO-252	N	60	20	40	60	18	23			2.7	1920	155	115	24	14.5			30	105
AOD444	Full Production	TO-252	N	60	20	12	20	60	85			3	450	61	27	3.8	1.9	4.2	16	27	30
AOD454A	Not for New Designs	TO-252	N	40	20	20	37	30	40			3	516	82	43	8.3	1.6	6.4	16.2	18	10
AOD464	Full Production	TO-252	N	105	25	40	100	28	31*			4	2038	204	85	38.5*	10	12.7	31.5	59.6	161
AOD478	Full Production	TO-252	N	100	20	11	45	140	152			2.8	445	29	16	5.1	2.4	8	17	21	97
AOD480	Not for New Designs	TO-252	N	30	20	25	21	23	33			2.6	373	67	41	3.5	1.6	4.3	15.8	10.5	4.5
AOD482	Full Production	TO-252	N	100	20	32	100	37	42			2.7	1630	100	50	18	9	7	29	32	200
AOD486A	Not for New Designs	TO-252	N	40	20	50	50	9.8	13			3	1600	320	100	10.5	4.8	6.5	33	31	33
AOD508	Full Production	TO-252	N	30	20	70	50	3	4.5			2.2	2010	898	124	17	8	7.5	37	14	20.3
AOD514	Not for New Designs	TO-252	N	30	20	46	50	5.9	11.9			2.4	1187	483	60	8.8	3.6	7.3	21.8	14.7	24
AOD516	Not for New Designs	TO-252	N	30	20	46	50	5	10			2.6	1333	512	42	8.5	2.5	7.5	23.3	14.1	16.2
AOD536	Full Production	TO-252	N	30	20	46	37.5	8.5	14.7			2.2	1140	400	45	6.5	2.5	7	18.5	12	20
AOD538	Full Production	TO-252	N	30	20	70	93	3.1	4.8			3.1	2160	915	115	14	6.3	8	29	16.5	34.2
AOD558	Full Production	TO-252	N	30	20	50	50	5.4	9.5			2.4	1187	483	60	4.1	3.6			14.7	24
AOD2144	Full Production	TO-252	N	40	20	120	156	2.3	4			2.4	5225	895	55	28	4.5			20	60
AOD2146	Full Production	TO-252	N	40	20	54	100	3.1	4.2			2.5	3830	630	45	20	3			18.5	50
AOD2606	Full Production	TO-252	N	60	20	46	150	6.8				3.5	4050	345	16.8	22	5	18	33	26	125
AOD2610E	Full Production	TO-252	N	60	20	46	59.5	9.5	13.3			2.4	1100	300	28	7	3.5			19	65
AOD2910	Full Production	TO-252	N	100	20	31	53.5	24	33			2.7	1190	95	7	7	2.5	7	20	30	145
AOD2910E	Full Production	TO-252	N	100	20	37	71.5	23	33			2.7	1200	93	6.3	8	2.5	7	20	25	120
AOD2916	Full Production	TO-252	N	100	20	25	50	34	43.5			2.7	870	68	3.5	5.5	2	7.5	23	20	88
AOD2922	Full Production	TO-252	N	100	20	7	17	140	176			2.7	250	19	2.5	1.8	0.8	5	19	19	52
AOD21357	New	TO-252	P	-30	25	-70	78	8	13			-2.3	2830	430	365	35	12	12.5	125	32	62
AOD4126	Full Production	TO-252	N	100	25	43	100	24	30*			4	1770	165	55	28*	10	12	17	20	82
AOD4130	Not for New Designs	TO-252	N	60	20	30	52	24	30			2.8	1582	100	67	13.4	7.2	7.5	33	22	76
AOD4132	Full Production	TO-252	N	30	20	85	100	4	6			3	3700	700	390	33	17.6	12	40	34	30
AOD4184A	Not for New Designs	TO-252	N	40	20	50	50	7	9.5			2.6	1500	215	135	14	6	6	30	29	26
AOD4185	Full Production	TO-252	P	-40	20	-40	62.5	15	20			-3	2550	280	190	18.6	8.6	9.4	55	38	47
AOD4186	Not for New Designs	TO-252	N	40	20	35	50	15	19			2.7	980	130	80	9	4.5	6	26	12	31
AOD4189	Full Production	TO-252	P	-40	20	-40	62.5	22	29			-3	1870	185	155	7.9	6.2	10	38	32	30
AOD4286	Full Production	TO-252	N	100	20	14	30	68	92			2.9	390	30	3	2.8	1.2	6	18	15	53
AOD66406	Full Production	TO-252	N	40	20	60	52	6.1	9.4			2.5	1480	245	13	8.5	3			11	21
AOD66616	New	TO-252	N	60	20	70	113	3.7				3.4	2870	940	38	42.5*	10	14.5	33	26	87

The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
The power dissipation P D is based on T J(MAX) =175°C, using junction-to-case thermal resistance, and is more useful in setting the upperdissipation limit for cases where additional heatsinking is used.
Repetitive rating, pulse width limited by junction temperature T J(MAX) =175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.
The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C. The SOA curve provides a single pulse rating.
The maximum current rating is package limited.
These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

this product has been designed and qualified for the consumer market. applications or uses as critical
components in life support devices or systems are not authorized. aos does not assume any liability arising
out of such applications or uses of its products. aos reserves the right to improve product design,
functions and reliability without notice.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

High Performance Mosfet Power Transistor With Extreme High Cell Density 0

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Gate Charge Test Circuit & Waveform

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High Performance Mosfet Power Transistor With Extreme High Cell Density

n channel mosfet transistor

high voltage transistor

high current mosfet switch

n channel mosfet transistor

high voltage transistor