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High Performance Mosfet Power Transistor With Extreme High Cell Density

High Performance Mosfet Power Transistor With Extreme High Cell Density

n channel mosfet transistor

high voltage transistor

Place of Origin:

ShenZhen China

Brand Name:

Hua Xuan Yang

Certification:

RoHS、SGS

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Product Details
Model Number:
HXY1404S
Product Name:
Mosfet Power Transistor
Power:
40V/12A
R DS(ON) = 16mΩ(typ.):
@V GS = 4.5V
Feature:
Extreme High Cell Density
Application:
Battery Protection
Payment & Shipping Terms
Minimum Order Quantity
Negotiation
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

Highest Performance Mosfet Power Transistor With Extreme High Cell Density

 

Mosfet Power Transistor Feature Description

 

It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

 

40V/12A
R DS(ON) = 13mΩ(typ.)@V GS = 10V
R DS(ON) = 16mΩ(typ.)@V GS = 4.5V
100%Avalanche Tested
Reliable and Rugged
Halogen Free and Green DevicesAvailable
(RoHSCompliant)

 

 

Mosfet Power Transistor Applications

 

PowerManagement forDC/DC
Switching Application
Battery Protection

 

 

Ordering and Marking Information

 

S
HXY1404
YYXXXJWW G

 

Package Code
S: SOP-8L
Date Code Assembly Material
YYXXX WW G:Halogen Free

 

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.

 

Absolute Maximum Ratings

 

High Performance Mosfet Power Transistor With Extreme High Cell Density 0

 

Typical Operating Characteristics

 

High Performance Mosfet Power Transistor With Extreme High Cell Density 1

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